Archive: https://archive.today/kYjhT From the post: >>Recently in material science news from China we hear that [Hailin Peng] and his team at Peking University just made the world’s fastest transistor and it’s not made of silicon. Before we tell you about this transistor made from bismuth here’s a whirlwind tour of the history of the transistor. The Bipolar Junction Transistor (BJT, such as NPN and PNP) was invented by Bell Labs in 1947. Later came Transistor-Transistor Logic (TTL) made with BJTs. The problem with TTL was too much power consumption. Enter the energy-efficient Field-Effect Transistor (FET). The FET is better suited to processing information as it is voltage-controlled, unlike the BJT which is current-controlled. Advantages of FETs include high input impedance, low power consumption, fast switching speed, being well suited to Very-Large-Scale Integration (VLSI), etc.